粗化方法及具粗化表面之發光二極體製備方法ROUGHENING METHOD AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE HAVING ROUGHENED SURFACE

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/165,095

專利證號

US 8,551,869 B2

專利獲證名稱

粗化方法及具粗化表面之發光二極體製備方法ROUGHENING METHOD AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE HAVING ROUGHENED SURFACE

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2013/10/08

技術說明

照明應用上，進一步提升LED之功率以增加亮度為一必然趨勢。目前具固態照明較大潛力之LED係以GaN-基藍光為主，其發光可藉由螢光材料轉換成白光。然目前傳統GaN-基LED因係採用水平結構，其正負電極配置於同一面，除使發光面積受限亦易於電極附近發生電流擁擠效應。驟然提升LED功率，將使焦耳熱增加，將造成發光亮度及效率衰減、主波長大幅改變、減低LED可靠性及縮短LED壽命。 藉由雷射剝離技術(laser lift-off, LLO)並利用具高導電及導熱半導體(Si、SiC)基板或金屬(Cu、Ni或其他合金)基板置換傳統之絕緣藍寶石基板所得垂直結構GaN-基LED之技術開發，可使正負電極配置於結構上下兩面大幅縮短電流導通路徑長度，並已成為提升GaN-基LED發光亮度及效率之主流技術。 然於垂直結構GaN-基LED結構中，其出光所經之GaN與空氣界面，依Snell定律，僅有23.4°以內之圓錐形(Cone)內之光可以逃脫(Escape)或析出至空氣中。理論上，若將表面粗化如圓頂或光子晶體，可避免此一全反射損失(total internal reflection, TIR)，但圓頂與光子晶體表面之製程複雜耗時或設備昂貴，成本高故難以大量產出，現亦只限於學術研究。 White light GaN-based LEDs has very high potential as an alternative for room lighting in the near future besides the applications on display and optical communication with advantages of low power consumption, long lifetime, fast operation response, and environmental protection.. Since LEDs have been applied in various fields, the demand for increasing LED output power becomes urgent. With the increase of light output power, the conventional LED’s drawbacks of large parasitic resistance, current crowding effect and heat accumulation due to the lateral structure and the poor thermal conductivity of the sapphire substrate, has become a limitation for its light output efficiency. To overcome these, a Vertical-structure GaN-based LEDs (abbreviated as VLEDs hereafter) has been implemented with the use of Laser-lift-off and electroplated or wafer-bonded conductive substrates in recent studies.

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