電阻式記憶體

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

104135116

專利證號

I 559452

專利獲證名稱

電阻式記憶體

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2016/11/21

技術說明

本發明揭示一種電阻式記憶體，用於解決記憶體的形成電壓無法降低之問題，該電阻式記憶體包含：一第一電極層；一阻隔體，疊設於該第一電極層，該阻隔體設有一通孔，用以露出該第一電極層；一側壁層，環設於該阻隔體之通孔的內側壁，該側壁層連接該第一電極層，該側壁層含有一第一介質；一含氧變阻層，覆蓋該第一電極層、該阻隔體及該側壁層，該含氧變阻層含有一第二介質，該第二介質的介電係數低於該第一介質的介電係數；及一第二電極層，疊設於該含氧變阻層。藉此，可確實解決上述問題。 This invention discloses a resistance random access memory which is used to solve a problem of a forming voltage of a memory unable to reduce. The resistance random access memory comprises a first electrode layer, a separating member, a side-wall layer, a variable resistance with oxygen layer and a second electrode layer. The separating member is mounted on the first electrode layer and has a through hole to expose the first electrode layer. The side-wall layer is circumferentially mounted on the inner side wall of the through hole of the separating member, and the side-wall layer is connected to the first electrode layer and has a first medium. The variable resistance with oxygen layer has a second medium, with a dielectric constant of the second medium is less than the dielectric constant of the first medium. The second electrode layer is mounted on the variable resistance with oxygen layer. Thus, it can actually resolve the said problem.

備註

本部(收文號1100053854)同意該校110年8月25日中產營字第1101401007號函申請終止維護專利(中山)

連絡單位 (專責單位/部門名稱)

產學營運及推廣教育處

連絡電話

(07)525-2000#2651

網址