Method for Forming Nano Sensing Chip by Selective Deposition of Sensing Materials Through Device-Localized Joule Heating and Nano Sensing Chip Thereof

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

16/686,604

專利證號

US 10,985,070 B2

專利獲證名稱

Method for Forming Nano Sensing Chip by Selective Deposition of Sensing Materials Through Device-Localized Joule Heating and Nano Sensing Chip Thereof

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2021/04/20

技術說明

形成奈米感測晶片的方法包含形成具有可產生區域焦耳熱的複數奈米元件；奈米元件於化學氣相沉積系統或原子層沉積系統中，經施加並控制電壓使奈米元件之感測區經焦耳熱產生適當的溫度，使不同感測材料選擇性沉積在奈米元件之產生焦耳熱區上。本發明更提供藉由上述方法形成的奈米感測晶片，將奈米感測晶片在奈米元件焦耳熱自熱工作，提供適當的反應溫度來感測特定分子。A method for forming a nanodevice sensing chip includes forming nano devices having a sensing region capable of generating localized Joule heating. Individual nanodevice is electrical-biased in a chemical vapor deposition (CVD) system or an atomic layer deposition (ALD) system enabling the sensing region of nanodevice produce localized Joule heating and depositing sensing material only on the sensing region. A sensing chip is formed via nanodevices with sensing region of each nanodevice deposited various materials separately. The sensing chip is also functioned under device Joule self-heating to detect the specific molecules.

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