高線性度擬晶性高電子遷移率場效電晶體

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

092117346

專利證號

二0二0六七

專利獲證名稱

高線性度擬晶性高電子遷移率場效電晶體

專利所屬機關 (申請機關)

國立高雄師範大學

獲證日期

2004/09/14

技術說明

本發明揭示一種擬晶性高電子遷移率電晶體(pHEMT’ s)，具有一n+/p+/n異質結構駝峰式閘極及一單原子 層摻雜結構。以n+-GaAs/p+-InGaP/n-InGaP駝峰式閘 極之單原子層摻雜InGaP/InGaAs/GaAs pHEMT’s為 例，由於p+-InGAP閘極至通道為p-n空乏及 InGaP/InGaAs異質接面具有大的導電帶不連續值( Ec)，閘極導通電壓可高於1.7 V。且因所加之閘極電 壓部分落於駝峰式閘極及載子調變之影響，總空乏層 厚度變化相當小，可同時獲得高汲極電流及高線性轉 導特性。本發明元件適於線性、大訊號放大器及高頻 電路應用。 New pseudomorphic high electron mobility transistors (pHEMT’s) with extremely high device linearity comprising an n+/p+/n camel- gate heterostructure and -doped sheet structure are disclosed by the present invention. For the example of InGaP/InGaAs/GaAs -doped pHEMT’s with an n+-GaAs/p+-InGaP/n-InGaP camel-gate structure, due to the p-n depletion from p+- InGaP gate to channel region and the presence of large conduction band discontinuity (Ec) at InGaP/InGaAs heterostructure, the turn-on voltage of gate is larger than 1.7 V. Attributed to the applied gate voltage partly lying on the camel gate and influence of the carrier modulation, the change of total depletion thickness under gate bias is relatively small, and high drain current and linear transconductance can be achieved, simultaneously. The excellent device performances provide a promise for linear and large signal amplifiers and high-frequency circuit applications.

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