光學式晶圓翹曲量測系統

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

103111276

專利證號

I 484136

專利獲證名稱

光學式晶圓翹曲量測系統

專利所屬機關 (申請機關)

國立中央大學

獲證日期

2015/05/11

技術說明

一種利用疊紋法偵測晶圓翹曲量的非接觸式量測技術，包含一光源、一線性光柵片、一電荷耦合元件(CCD) 影像偵測器及一分光及合光元件、一聚焦透鏡所組成。藉由將光柵影像投射至待測晶圓表面後，再反射回CCD影像偵測器形成量測光柵影像，經由與實體或數位(虛擬)參考光柵影像相疊後，產生相對應的疊紋條紋。當晶圓發生翹曲時，疊紋條紋將隨之產生相移變化，透過分析疊紋條紋上各偵測區域的相移變化量，即可回推晶圓的翹曲值。量測解析度可藉由挑選光柵的尺寸、控制兩光柵間之夾角或透鏡焦距來調整。 Description of Invention (please type or print clearly): A non-contact measurement technique for measuring wafer warping using the moiré effect method is proposed. The technique consists of a light source, a linear grating, a CCD camera, a beam-splitter, and a focusing lens. The image of a linear grating is projected onto a wafer surface and then reflected into the CCD camera to obtain the image of the measurement grating. By overlapping the images of the measuring grating and the reference grating (physical or digital), a corresponding moiré fringe is formed. When wafer warpage occurs, the phase of the moiré fringe will be changed proportionally. The value of wafer warpage can be obtained by analyzing the phase shift of the moiré fringes in according detection region. The measurement resolution can be controlled by changing the pitch size of the grating or focal length of the focusing lens, or adjusting the angle between the images of measuring and reference gratings.

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