奈米碳管及其製備方法Carbon Nanotube and Method For Producing The Same

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

098130882

專利證號

I 499553

專利獲證名稱

奈米碳管及其製備方法Carbon Nanotube and Method For Producing The Same

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2015/09/11

技術說明

一項利用簡單的階段成長過程卻可擁有極佳場發特性的奈米碳管在此被發現出來。在這項成長過程裡，成長中途先被中斷且在此期間催化劑發生了再活化的現象，最後促成了碳管的快速成長。因中斷過程後期成長的碳管長度比在頂端原先生成的碳管具有快速的成長速率，成長速率可比已生成碳管高669%或甚至更高。我們發現碳管的管狀結構在此成長階段是連續的。這種連續性的結構可建構出碳管在奈米-機電上作為junction的功用。最後達到以此種成長過程成長之奈米碳管具有極優良的場發特性並具有極低開場電壓約0.l0 V/m. A simple stepped growth process for the synthesis of carbon nanotubes that exhibit excellent field emission properties is reported. In the process, the growth was interrupted and during the interruption the catalyst was re-activated in-situ, resulting enhanced growth of the CNTs after the interruption. CNTs re-grow on top of existing CNTs at a much higher rate, which can be up to 669% higher. The tubular structure continues during the re-growth. The structural continuity creates an opportunity for the fabrication of junction CNTs for nano-electronic applications. The resulting CNTs also have excellent field emission properties exhibiting an extremely low turn-on field of 0.l0 V/ m.

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