具有矽鍺磊晶之基板之製造方法MANUFACTURING METHOD FOR FORMING SUBSTRATE WITH SILICON-GERMANIUM EPITAXIAL LAYER

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

102131816

專利證號

I 515772

專利獲證名稱

具有矽鍺磊晶之基板之製造方法MANUFACTURING METHOD FOR FORMING SUBSTRATE WITH SILICON-GERMANIUM EPITAXIAL LAYER

專利所屬機關 (申請機關)

國立中央大學

獲證日期

2016/01/01

技術說明

本發明提供了一種形成矽鍺磊晶層之方法，係利用如陽極氧化之電化學原理使矽鍺磊晶層形成於矽基板，且所形成的矽鍺磊晶層具有緻密、低缺陷、厚度薄(100nm以下)等特點，為習知技術所無法達成。 本發明之高聚光型太陽能電池之鍺矽晶片製作技術，可輕鬆簡單地製作出100nm以下之薄型鍺矽薄膜。本發明之製作方法簡單、製作成本低廉、不需使用高溫製程，且所得到之鍺矽磊晶層具有緻密、低缺陷、厚度薄(100nm以下)等特點。 A method for providing a SiGe epitaxial layer is provided, which utilizes electrochemical method for forming the SiGe epitaxial layer on a silicon susbtrate. The as provided SiGe epitaxial layer has advantages such as highly condensed, few defects, thin (with thickness of 100nm or below), which cannot be obtained by conventional techniques. By the method for providing a SiGe epitaxial layer for high concentrated photovoltaic of the present invention, it is able to easily provide an SiGe epitaxial layer with thickness of 100nm or below. The method of the present invention is simple, low cost for manufacturing, and has no high temperature process, whereas the as provided SiGe epitaxial layer has advantages such as highly condensed, few defects, and thin (with thickness of 100nm or below).

備註

本部(收文號1100054674)同意該校110年8月27日中大研產字第1101401054號函申請終止維護專利(中央)

連絡單位 (專責單位/部門名稱)

智權技轉組

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