氧化鎳酸鹼值感測器及其製造方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099145193

專利證號

I 417539

專利獲證名稱

氧化鎳酸鹼值感測器及其製造方法

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2013/12/01

技術說明

本發明係利用射頻磁控濺鍍系統製備氧化銦錫(ITO)和氧化鎳(NiO)薄膜於石英玻璃基板上，以形成氧化鎳/氧化銦錫/石英玻璃 (NiO/ITO/quartz)之感測結構，並結合金屬－氧化物－半導體場效電晶體以形成氧化鎳酸鹼離子延伸式閘極場效電晶體。接著，將感測元件置於不同酸鹼溶液中，利用Agilent 4155半導體參數分析儀量測元件之電流－電壓特性曲線，以探討氧化鎳薄膜對於酸鹼離子的感測特性。實驗結果顯示氧化鎳薄膜製備於石英玻璃基板之靈敏度為59.08 mV/pH，其線性度特性甚佳可達0.999，可應用於檢測酸鹼離子。此外，本元件具有低成本、製程簡易、高穩定性等優點，有極佳之可靠度及耐用度。若結合生物分子的應用，如酵素、DNA，可發展成酵素場效電晶體。 In this invention, tindium tin oxide (ITO) and nickel oxide (NiO) thin films were deposited on quartz substrates by RF magnetron sputtering system followed by the sensing structure connected with the metal-oxide-semiconductor field-effect transistors (MOSFETs). The sensing properties of the NiO-based pH EGFETs were obtained in different buffer solutions, and the pH sensing characteristics of the studied devices were measured by an Agilent 4155 semiconductor parameter analyzer. According to experimental results, the pH sensitivity of the studied device is 59.08 mV/pH, and a good linearity is 0.999. Thus, the studied devices can be applied to fabricate high-performance pH sensors. In addition, the studied devices have certain advantages such as low cost, simple processes and long-term stability. As combined with biomolecules applications, such as enzymes, DNA, and so on, this invented structure can be used to produce enzyme FETs.

備註

本部(收文號1090031211)同意該校109年5月29日成大技轉字第1095600304號函申請終止維護專利(成大)

連絡單位 (專責單位/部門名稱)

企業關係與技轉中心

連絡電話

06-2360524

網址