發光二極體的封裝結構及其封裝方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

101127673

專利證號

I 487147

專利獲證名稱

發光二極體的封裝結構及其封裝方法

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2015/06/01

技術說明

一種粗螢光粉結構之發光二極體封裝結構的製作方法，包含提供發光二極體晶片；將發光二極體晶片置放在基板上，使得在基板及在發光二極體晶片之上形成容置空間；於容置空間內填入封裝材料以包覆發光二極體晶片以形成發光二極體封裝結構；填入螢光粉結構在覆蓋發光二極體封裝結構之上；粗結晶矽圖案之模型形成在螢光粉結構之發光二極體封裝結構之上；將脫模溶液形成在模型之粗結晶矽圖案上；以及對在發光二極體封裝結構上之螢光粉結構執行壓印步驟，係將粗結晶矽圖案之模組壓印在螢光粉結構之表面上，以形成粗螢光粉結構之發光二極體封裝結構。 A method for fabricating a light emitting package structure with a randomly textured phosphor structure is provided. A light emitting device is first provided and the light emitting device is placed on the substrate, and thus a accommodate space is formed between the substrate and the light emitting device. An encapsulated material is filled into the accommodate space to encapsulate the light emitting device to form a light emitting package structure. A phosphor structure is formed on the light emitting package structure. A textured crystalline silicon (c-Si) pattern mold is formed over the phosphor structure of light emitting package structure. A de-molding solution is coated on the textured crystalline silicon (c-Si) pattern mold. Finally, the textured crystalline silicon (c-Si) pattern mold is imprinted on the phosphor structure of the light emitting package structure to form the light emitting package structure with a randomly textured phosphor structure.

備註

本部(收文號1100065219)同意該校110年10月27日陽明交大研產學字第1100036963號函申請終止維護專利(陽明交大)

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