電漿處理系統試片座溫控裝置

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

098131125

專利證號

I 375732

專利獲證名稱

電漿處理系統試片座溫控裝置

專利所屬機關 (申請機關)

國立虎尾科技大學

獲證日期

2012/11/01

技術說明

化學機械研磨墊為一高分子材料，如欲對其進行表面改質與鍍膜處理必須在低溫之下進行,此溫度不能大於攝氏80度，本發明專利為一種電漿系統試片座溫控裝置，本發明之主要目的係藉由在試片座施加一高射頻偏壓，因此金屬板會因此產生感應電荷，當試片座與金屬隔離層間的氣壓夠高時便會產生中空陰極放電的現象而產生電漿，藉由所產生之電漿提昇試片座之溫度、節省加熱時間以及避免濺射污染物影響加熱效率，並同時於試片座中設計一特殊之冷卻循環裝置，以達到溫度控制之功效，同時可以達到一較潔淨之鍍膜與改質環境，此可以應用於化學機械研磨墊之表面特性改進與鍍膜，藉以改善研磨速率與平整度。 The pad of chemical mechanical polishing is a kind of polymer material. Surface modification or coating for a pad has to process under a low temperature, not higher than 80 ℃. The pattern is a kind of temperature control device for specimen holder in the plasma system. The principle of this pattern is that a RF bias is applied on specimen holder. A metal plate which is sat near the specimen holder will be inducted charge. As high as gas pressure, the hollow cathode arc will be happened and generated plasma. Temperature of holder than rises by plasma. This can save heating time and avoid sputtering pollution in decreasing heating efficiency. A special cooling recycle device can be adapted at the same time in order to achieve temperature controlling purpose. A cleaner environment for deposition and modification can thus be achieved. The technology can be applicated in surface modification and deposition for the pad using in CMP process in order to improve polishing rate and uniformity.

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