發光元件之製作方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099143450

專利證號

I 412157

專利獲證名稱

發光元件之製作方法

專利所屬機關 (申請機關)

國立臺灣大學

獲證日期

2013/10/11

技術說明

本發明提供一種發光元件之製作方法，包括：提供一第一基板；形成一半導體層於第一基板上；形成複數個圖案化罩幕層於半導體層上；以磊晶側向生長(epitaxial lateral overgrowth)方法成長一磊晶層於半導體層上；形成一發光二極體結構於磊晶層上；形成一第一電極層於發光二極體結構上；將發光二極體結構接合一第二基板；及進行一光輔助電化學蝕刻，將第一基板從磊晶層剝離。The invention provides a method for forming a light emitting device. A first substrate is provided. An semiconductor layer is formed on the first substrate. A plurality of patterned mask layer is formed on the semiconductor layer, followed by performing epitaxial lateral overgrowth process to grow an epitaxy layer on the semiconductor layer. A light emitting structure is formed on the epitaxy layer. A first electrode layer is formed on the light emitting structure. The light emitting structure is wafer bonded to a second substrate. A photoelectrochemical eching is performed to lift off the first substrate form the epitaxy layer. The invention provides a method for forming a light emitting device. A first substrate is provided. An semiconductor layer is formed on the first substrate. A plurality of patterned mask layer is formed on the semiconductor layer, followed by performing epitaxial lateral overgrowth process to grow an epitaxy layer on the semiconductor layer. A light emitting structure is formed on the epitaxy layer. A first electrode layer is formed on the light emitting structure. The light emitting structure is wafer bonded to a second substrate. A photoelectrochemical eching is performed to lift off the first substrate form the epitaxy layer.

備註

本部(收文號1110015008)同意該校111年3月16日校研發字第1110018536號函申請終止維護專利(國立臺灣大學)

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