電極及其製造方法與應用Electrodes and their fabrication methods as well as applications

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/424,457

專利證號

US 8,709,105 B2

專利獲證名稱

電極及其製造方法與應用Electrodes and their fabrication methods as well as applications

專利所屬機關 (申請機關)

國立雲林科技大學

獲證日期

2014/04/29

技術說明

本係技術關於一種電極，其包含一基材以及一複合金屬氧化物膜層，該複合金屬氧化物膜層係設於該基材的表面；該複合金屬氧化物膜層係可包含錳氧化物、鈷氧化物及鋅氧化物。該複合金屬氧化物膜層係以錳氧化物為主要的材料，而另外添加較為少量的鈷氧化物以及鋅氧化物，以提升電極的穩定性。本技術另關於一種電極的製造方法，其係使用較簡易之單一射頻濺鍍步驟而且為乾式製程的方式製作本技術之電極，其可降低電極中之雜質而不易發生爆炸。本技術又關於一種包含有前述之電極的電化學電容器。本技術再關於一種包含有前述電極的電池。 The present technology relates to an electrode including a base material and a complex metal oxide film. The complex metal oxide film is deposited on the surface of the base material. The complex metal oxide film includes manganese oxide, cobalt oxide, and zinc oxide. The main material for the complex metal oxide film is manganese oxide. The stability of the electrode is enhanced by little cobalt oxide and zinc oxide. Furthermore, the present technology relates to a method for fabricating an electrode. The method utilizes a dry process, simpler one-step radio frequency sputtering to fabricate the electrode of the present technology. The process can reduce residual impurities in the electrode and then prevent it from explosion. Moreover, the present technology relates to the electrochemical capacitor of the above electrode. The present technology also relates to the cell of the above electrode.

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