全波段超高演色性有機發光二極體Full-band and high-CRI organic light-emitting diode

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/869,944

專利證號

US 8,809,848 B1

專利獲證名稱

全波段超高演色性有機發光二極體Full-band and high-CRI organic light-emitting diode

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2014/08/19

技術說明

本發明係關於一種全波段超高演色性有機發光二極體，係包括：一第一導電層、至少一第一載子過渡層、複數個發光層、至少一第二載子過渡層、以及一第二導電層。於本發明中，主要係將複數個染料摻雜於有機發光二極體之複數個發光層之內，使得該些發光層可發出複數個黑體輻射互補光；並且，由於該些黑體輻射互補光於CIE座標圖上的複數個色座標所圍成的範圍係含完全涵蓋CIE座標圖上的普朗克曲線(Planck's locus)，也因此該些黑體輻射互補光所係混成的光係為一全波段之高演色性光源。 The present invention relates to a full-band and high-CRI organic light-emitting diode, comprising: a first conductive layer, at least one first carrier transition layer, a plurality of light-emitting layers, at least one second carrier transition layer, and a second conductive layer. In the present invention, a plurality of dye are doped in the light-emitting layers, so as to make the light-emitting layers emit a plurality of blackbody radiation complementary lights, wherein the chromaticity coordinates of the blackbody radiation complementary lights on 1931 CIE (Commission International de'Eclairage) Chromaticity Diagram surround to a specific area, and this specific area fully encloses the Planck's locus. Therefore, the blackbody radiation complementary lights are mixed to a full-band and high-CRI light.

備註

連絡單位 (專責單位/部門名稱)

智財技轉組

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03-5715131-62219

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