可變電感結構、製程及耦合方法STRUCTURE, MANUFACTURE PROCEDURE, AND COUPLING METHOD FOR VARIABLE INDUCTOR

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

102102936

專利證號

I 466143

專利獲證名稱

可變電感結構、製程及耦合方法STRUCTURE, MANUFACTURE PROCEDURE, AND COUPLING METHOD FOR VARIABLE INDUCTOR

專利所屬機關 (申請機關)

國立中興大學

獲證日期

2014/12/21

技術說明

本發明提供一種可變電感結構，包含一控制主線圈以及一控制副線圈，控制副線圈與控制主線圈位於相異平面，控制主線圈與控制副線圈互相耦合產生一互感值，控制副線圈更包含複數繞圈及複數電晶體，複數電晶體連接繞圈，電晶體切換開關繞圈，用以啟閉控制主線圈與控制副線圈之互感值，令可變電感結構產生一等效感值。本發明可藉由電晶體切換來細部調整可變電感結構之有效感值。控制主線圈本身亦可藉由電晶體切換開關，產生不同線圈繞組及對應之感值。控制副線圈位於下層金屬可藉由設計重疊區域面積，圈數，金屬層及切換電晶體開關等方式來控制主副線圈間互感來改變總體結構之感值。 A variable inductor structure is provided and includes a controlled primary coil and a controlled secondary coil. The controlled secondary coil and the controlled primary coil are located in different planes, the controlled primary coil and the controlled secondary coupled to each other to generate a mutual inductance value. The controlled secondary coil contain comprises a plurality of coils and a plurality of transistors, the plural transistors is connected to plural coils, the transistors switch the coils to control the mutual inductance value between the primary coil and the controlled secondary coil, and to make the variable inductor structure to generate an effective inductance value. The present invention adjusts the inductance effective value of the variable inductor structure by switching transistors.

備註

本部(收文號1110019123)同意該校111年4月1日興產字第1114300232號函申請終止維護專利(國立中興大學)

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