PROCESS FOR MAKING INTERCONNECT OF GROUP III-V SEMICONDUCTOR DEVICE, AND GROUP III-V SEMICONDUCTOR DEVICE INCLUDING INTERCONNECT MADE THEREBY

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

16/702,282

專利證號

US 11,322,398 B2

專利獲證名稱

PROCESS FOR MAKING INTERCONNECT OF GROUP III-V SEMICONDUCTOR DEVICE, AND GROUP III-V SEMICONDUCTOR DEVICE INCLUDING INTERCONNECT MADE THEREBY

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2022/05/03

技術說明

以AZ5214E及AZ4620兩種光阻製作具有導角的超厚光阻結構，並以WNx、Pt、TiN為阻障層，搭配厚銅金屬結構製作高頻高功率元件。 AZ5214E and AZ4620 are used to fabricate the thick photoresist structure with undercut to facilitate thick copper evaporation. Furthermore, WNx, Pt, TiN are used as barrier layer to manufacture high power and high frequency devices with copper metallization structure.

備註

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