提升高電子移動率電晶體的崩潰電壓之結構Structure to increase breakdown voltage of high electron mobility transistor

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

16/906,109

專利證號

US 11,289,592 B2

專利獲證名稱

提升高電子移動率電晶體的崩潰電壓之結構Structure to increase breakdown voltage of high electron mobility transistor

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2022/03/29

技術說明

一種提升高電子移動率電晶體的崩潰電壓之結構，用以解決習知高電子移動率電晶體在高電壓狀態下喪失功能的問題。係包含：一基板；一導通層，位於該基板上，導通層之上半部係一電子供應層，且下半部係一電子通道層；一閘極絕緣層，疊層於該電子供應層上；及一電場分散層，疊層於該閘極絕緣層上，該電場分散層的介電常數小於該閘極絕緣層的介電常數，一閘極位於該電場分散層與該閘極絕緣層之間，一源極及一汲極分別電連接該電場分散層、該閘極絕緣層、該導通層之該電子供應層及該電子通道層。 A structure to increase breakdown voltage of high electron mobility transistor is used to solve the problem of function loss of the high electron mobility transistor which working on high voltage state. The structure includes one substrate, a transmit layer located on the substrate, a gate insulating layer and an electric-field-dispersion layer. The upper half of the transmit layer is an electron supply layer, and the lower half of the transmit layer is an electron tunnel layer. The gate insulating layer is laminated on the electron supply layer, and the electric-field-dispersion layer is laminated on the gate insulating layer. The permittivity of the electric-field-dispersion layer is smaller than the permittivity of the gate insulating layer. A gate electrode is located between the electric-field-dispersion layer and the gate insulating layer. Respectively, a source electrode and a drain electrode are electrically connected to the electric-field-dispersion layer, the gate insulating layer, the electron supply layer and the electron tunnel layer.

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