以超臨界流體減少電子元件缺陷之方法/METHOD FOR REDUCING DEFECTS OF ELECTRONIC COMPONENTS BY A SUPERCRITICAL FLUID

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

16/511,396

專利證號

US 11,101,141 B2

專利獲證名稱

以超臨界流體減少電子元件缺陷之方法/METHOD FOR REDUCING DEFECTS OF ELECTRONIC COMPONENTS BY A SUPERCRITICAL FLUID

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2021/08/24

技術說明

本發明揭示一種以超臨界流體處理電子元件之方法，用於解決習知電子元件效能問題，該方法之步驟包含：於一腔體內通入一超臨界流體，該超臨界流體摻雜一氫同位素之化合物、一有機金屬化合物或鹵素、氧、硫、硒、磷、砷、其化合物，於該超臨界流體維持超臨界態之溫度範圍及壓力範圍下，使該超臨界流體對該腔體內的至少一電子元件進行改質反應。藉此，可確實解決上述問題。 This invention discloses a method for processing electronic components by supercritical fluid, which be used to solve a problem for a performance of conventional electronic components, and comprises steps of leading supercritical fluid into a cavity, the supercritical fluid doping a compound of hydrogen isotope, an organic metal compound or the halogens, oxygen, sulfur, selenium, phosphorous, arsenic, compound thereof, to do a modified reaction of at least one electronic component in the cavity by the supercritical fluid maintained within a temperature range and a pressure range for a supercritical state. Thus, it can actually resolve said problem.

備註

連絡單位 (專責單位/部門名稱)

產學營運及推廣教育處

連絡電話

(07)525-2000#2651

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