半導體結構及其製作方法和磊晶半成品的製作方法semiconductor structure and method for making the same, and method for forming epitaxial semi-finished product

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

100114266

專利證號

I 452691

專利獲證名稱

半導體結構及其製作方法和磊晶半成品的製作方法semiconductor structure and method for making the same, and method for forming epitaxial semi-finished product

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2014/09/11

技術說明

一種半導體結構，包含磊晶用基板及主體，該主體包括磊晶層單元及底著層，該磊晶層單元具有形成於該磊晶用基板上且可作光電轉換的第一層體，底著層形成於第一層體頂面，且具有複數整齊且間隔排列的底著區及連接彼此相鄰底著區的角隅的連接區。藉由該等連接相鄰底著區的角隅的連接區，互相牽制該等底著區，使得在後續製程中預定自底著層形成電鍍增厚層時，底著區與電鍍增厚層的角隅不易由於應力不平衡而翹曲及掀起，進而提升由半導體結構製成的磊晶半成品的製程良率。本發明還提供磊半導體結構的製作方法及磊晶半成品。 This paten reports the use of cross-shaped pattern epitaxial lift-off (ELO) technology to release crack-free single crystal epilayers with a optoelectronic device from substrate. A cross-shaped pattern array was used to define cell size and provide the etch path for the etchant solution. AlAs was used as a sacrificial layer and etched using a hydrofluoric acid etchant through the cross-shaped hole. Results indicate that the entire wafer can be etched simultaneously. The desired carrier, the electroplate metal substrate, can contact the epilayer directly without wax or low-viscosity epoxy, and can also be applied to an external force through magnetic attraction to decrease the release time. After the cross-shaped pattern ELO process, the separated substrate can be recycled through chemical cleaning. The performance of solar cells grown on new and recycled GaAs substrates remained above 90% of the initial performance when the substrate was recycled less than three times.

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