發明
中華民國
101139290
I 456706
矽穿孔自我繞線電路及其繞線方法
國立彰化師範大學
2014/10/11
本發明提供一種矽穿孔自我繞線電路,其包含複數矽穿孔及複數平面晶片層。複數平面晶片層藉由矽穿孔連接,各平面晶片層包含一內建自我測試電路、一內建自我繞線交換網路及一核心電路。內建自我繞線交換網路連接內建自我測試電路。內建自我繞線交換網路包含複數有效位元引線及複數矽穿孔引線,矽穿孔引線對應矽穿孔。核心電路具有連接內建自我繞線交換網路之複數輸出入引線。本發明藉由內建自我測試電路測試矽穿孔,並經內建自我繞線交換網路路由矽穿孔並連結核心電路。 The present invention provides a through-silicon via self-routing circuit. The through-silicon via self-routing circuit comprises a plurality of through-silicon vias and a plurality of planner chip layers. The planners chip layers are connected to each other by the TSVs. Each planner chip layer comprises a built-in self-test circuit, a built-in self-routing network and a core circuit. The built-in self-routing network is connected to the built-in self-test circuit. The built-in self-routing network comprises a plurality of valid bit leads and plural through-silicon via leads, the plural through-silicon via leads corresponds to the plural through-silicon vias. The core circuit includes plural input-output leads. As a result, the redundant TSVs can be selected and chosen to be connected to the core circuit through built-in self-routing network.
本部(收文號1090032992)同意該校109年6月4日研發字第1090400154號函申請終止維護專利(彰師大)
研究發展處
04-7232105轉1858
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