Method to deposit particles on charge storage apparatus with charge patterns and forming method for charge patternsMethod to deposit particles on charge storage apparatus with charge patterns and forming method for charge patterns

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

12/000,944

專利證號

US 7,803,261 B2

專利獲證名稱

Method to deposit particles on charge storage apparatus with charge patterns and forming method for charge patternsMethod to deposit particles on charge storage apparatus with charge patterns and forming method for charge patterns

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2010/09/28

技術說明

本發明係揭露一種利用具有電荷圖案的電荷儲存裝置沈積粒子的方法及電荷圖案的形成方法,此電荷圖案的形成方法包含提供具有導電基板及電荷儲存層的電荷儲存裝置,將其置於真空或無水環境中,利用通以第一電壓之電極與通以第二電壓之導電基板,形成電場。藉電場使電荷儲存於電荷儲存裝置之電荷儲存層中,且形成電荷圖案,並藉此具有電荷圖案的電荷儲存裝置以沈積粒子於電荷圖案上。 因依本發明之利用具有電荷圖案的電荷儲存裝置沈積粒子的方法及電荷圖案的形成方法，實現電荷圖案的形成及單層粒子的形成，並進而形成多重粒子沈積結構。 The present invention discloses a method to deposit particles on a charge storage apparatus with charge patterns and a forming method for charge patterns. The forming method for charge patterns includes providing the charge storage apparatus having an electrically conducting substrate and a charge storage media layer. The charge storage apparatus is disposed in a vacuum or an anhydrous environment. An electrode and the electrically conducting substrate are utilized to conduct a first voltage and a second voltage respectively to form an electric field. Charges are then stored into the charge storage media layer of the charge storage apparatus through the electric field and the charge patterns are then formed. Accordingly, particles are deposited on the charge pattern-defined areas.

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