電荷儲存元件及其製造方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

098124696

專利證號

I 426610

專利獲證名稱

電荷儲存元件及其製造方法

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2014/02/11

技術說明

本發明係有關於一種電荷儲存元件及其製造方法，該電荷儲存元件包括:基板，係具有第一表面及相對之第二表面；穿隧絕緣層，係位於基板之第一表面上；電荷儲存層，係位於穿隧絕緣層上，其包括第一介電層及第二介電層，且第一介電層係與穿隧絕緣層連接，而第二介電層係位於第一介電層上，其中，第一介電層與基板間之導電帶差大於第二介電層與基板間之導電帶差；以及阻擋絕緣層，係位於電荷儲存層上，且與第二介電層連接。據此，本發明之電荷儲存元件具有優異之寫入、抹除及電荷保持力特性。 The present invention relates to a charge trapping device and a method for manufacturing the same. The charge trapping device includes: a substrate having a first surface and an opposite second surface; a tunneling insulating layer, disposed on the first surface of the substrate; a charge trapping layer, disposed on the tunneling insulating layer and including a first dielectric layer and a second dielectric layer, in which the first dielectric layer is connected to the tunneling insulating layer, the second dielectric layer is disposed over the first dielectric layer, and a conduction band offset between the first dielectric layer and the substrate is larger than that between the second dielectric layer and the substrate; and a blocking insulating layer, disposed on the charge trapping layer and connected to the second dielectric layer. Accordingly, the charge trapping device of the present invention has excellent programming, erasing and charge retention properties.

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