具有三個校正器之射頻散射參數校正方法及量測結構Calibration Method for Radio Frequency Scattering Parameter Measurement Applying Three Calibrators and Measurement Structure Thereof

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/223,410

專利證號

US 8,798,953 B2

專利獲證名稱

具有三個校正器之射頻散射參數校正方法及量測結構Calibration Method for Radio Frequency Scattering Parameter Measurement Applying Three Calibrators and Measurement Structure Thereof

專利所屬機關 (申請機關)

元智大學

獲證日期

2014/08/05

技術說明

一種使用一傳輸線段校正器、一抵補串聯元件校正器及一抵補並聯元件校正器的射頻散射參數量測技術，特別適合CMOS晶圓元件待測物之量測，其中該串聯元件以及並聯元件之高頻寄生效應可直接以自我校正方式求得，避免因矽基板之損耗所造成之理想校正件模型誤差。因所有校正器與待測物具相同之傳輸線長而有相同的誤差盒，經由校正方法求出誤差盒的散射參數矩陣後，可對該待測物未經校正的量測數據進行運算，以求出待測物真正之射頻散射參數。 A one-tier RF scattering parameter measurement technique is proposed using a transmission line section, an offset-series component, and an offset-shunt component as calibrators, which are suitable for CMOS on-wafer device characterization purposes. The parasitic effects of series and shunt components are directly solved with the self-calibration determining equations to avoid the modeling errors due to substrate loss of silicon for series/shunt components. Since all the interconnects of calibrators are the same as the device-under-test (DUT), the error boxes of the calibrators and the DUT are identical so as the de-embedding process can be performed for the un-corrected measured data of the DUT. Through the calibration procedures, the scattering parameters of the error boxes are acquired, and thereby the actual scattering parameter of DUT is calculated accordingly.

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