Quasi-Single-Crystal Film And Manufacturing Method Thereof

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

16/939,566

專利證號

US 11,346,019 B2

專利獲證名稱

Quasi-Single-Crystal Film And Manufacturing Method Thereof

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2022/05/31

技術說明

一種類單晶薄膜及其製造方法，乃將表面具有<111>優選方向的金屬薄膜藉由機械拉伸力的作用，使得晶粒的排列更為有序，來獲得具有三軸優選方向之類單晶薄膜，此類單晶薄膜於拉伸方向及垂直拉伸方向各具有<211>與<110>之優選方向，且維持其表面<111>的優選方向。本發明可用於生產高度異向性的大面積類單晶薄膜，亦可應用於成長二維材料或其他異向性特徵結構之開發。 A quasi-single-crystal film and a manufacturing method thereof are disclosed. The metal film having the <111> preferred orientation on its surface is subjected to mechanical tensile force to make the arrangement of the crystal grains more ordered, thereby obtaining a quasi-single-crystal film having the preferred directions of three axes. The quasi-single-crystal film has a preferred direction of <211> in the tensile direction and a <110> preferred direction in the direction vertical to the tensile force, and maintains a preferred direction of <111> on its top surface. The invention can be used to produce highly anisotropic large-area single crystal thin films, and can also be applied to the development of growing two-dimensional materials or other anisotropic features.

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