SEMICONDUCTOR STRUCTURE OF TRENCH TRANSISTORS AND MANUFACTURING METHOD THEREOF

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

17/011,506

專利證號

US 11,342,417 B2

專利獲證名稱

SEMICONDUCTOR STRUCTURE OF TRENCH TRANSISTORS AND MANUFACTURING METHOD THEREOF

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2022/05/24

技術說明

本發明提出一種新穎的UMOSFET的馬鞍形基底結構及其製作技術。此馬鞍形基底以斜角離子植入達成，基底深度由溝槽深度控制，基底厚度由離子植入能量、角度、劑量決定。此結構可以降低寄生電容，改善元件性能，製作技術可以避免使用MeV以上的離子植入設備，降低設備投資成本，此技術亦可減少離子植入次數，降低製程成本。 The invention proposes a novel saddle-shaped base structure of UMOSFET and its manufacturing technology. This saddle-shaped base is achieved by tilt-angle ion implantation. The depth of the base is controlled by the depth of the trench. The thickness of the base is determined by the ion implantation energy, angle, and dose. This structure can reduce parasitic capacitance and improve device performance. The manufacturing technology can avoid the use of MeV ion implanter so that reduce the equipment investment costs. This technology can also reduce the number of ion implantation steps and reduce process costs.

備註

連絡單位 (專責單位/部門名稱)

智慧財產權中心

連絡電話

03-5738251

網址