p型氮化鎵高電子移動率電晶體

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

109139759

專利證號

I 780513

專利獲證名稱

p型氮化鎵高電子移動率電晶體

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2022/10/11

技術說明

一種p型氮化鎵高電子移動率電晶體，用以解決習知p型氮化鎵高電子移動率電晶體載子直接穿隧及閘極漏電流的問題。係包含：一基板；一通道層，位於該基板上；一供應層，疊層於該通道層上；及一摻雜層，疊層於該供應層上，該摻雜層之一摻雜濃度係漸進式分布，其中，靠近該供應層之一第一摻雜區的該摻雜濃度低於遠離該供應層之一第二摻雜區的該摻雜濃度，一閘極位於該摻雜層上，一源極及一汲極分別電連接該通道層及該供應層。 A p-GaN high electron mobility transistor is provided to solve the problem of direct tunneling and gate electrode leakage current of the conventional p-GaN high electron mobility transistor. The transistor includes a substrate, a channel layer located on the substrate, a supply layer stacked on the channel layer, and a doped layer stacked on the supply layer. A doping concentration of the doped layer is gradually distributed, wherein the doped concentration in a first doped region close to the supply layer is lower than the doped concentration in a second doped region far from the supply layer. A gate electrode is located on the doped layer, a source electrode and a drain electrode are respectively electrically connected to the channel layer and the supply layer.

備註

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產學營運及推廣教育處

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(07)525-2000#2651

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