用以量測偏壓溫度效應之環形震盪器Oscillato based on a 6T SRAM for measuring the Bias Temperature Instability

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/484,648

專利證號

US 8,804,445 B2

專利獲證名稱

用以量測偏壓溫度效應之環形震盪器Oscillato based on a 6T SRAM for measuring the Bias Temperature Instability

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2014/08/12

技術說明

內嵌式6T靜態隨機存取記憶體環形振盪器主要致力於及時式在晶片上偵測因負偏壓溫度效應/正偏壓溫度效應所影響的長時穩定度。透過修改後的靜態隨機存取記憶體陣列，空白的細胞與主要活耀的單元提供了加壓與量測元件特性變化的功能。並且為了確保基本的特性與原先的六顆電晶體式靜態隨機存取記憶體單元相同，我們不改變擴散層(diffusion)、連接點(contact)與poly的排序方式。這個技術可以幫助電路設計者更去了解動態且即時的長時穩定度變化。 Embedded 6T SRAM ring oscillator focuses on on-chip real-time monitoring scheme for detecting long-term reliability degradation induced by NBTI and PBTI. Through modified SRAM arrays, blanked cells and active cells provides the ability for stressing and measuring the changing of devices. There is no change of diffusion, poly and contact placement to ensure the same fundamental characteristics as original 6T SRAM cells. This invention can help designers to realize the dynamic and real-time change of long-term reliability.

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