二氧化鈰酸鹼値感測器及其製造方法Cerium oxide ph sensor and method of producing the same

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

105119590

專利證號

I 579561

專利獲證名稱

二氧化鈰酸鹼値感測器及其製造方法Cerium oxide ph sensor and method of producing the same

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2017/04/21

技術說明

本發明係利用射頻磁控濺鍍系統製備二氧化鈰(CeO2)薄膜於氟:二氧化錫（FTO）玻璃基板上，以形成二氧化鈰/氟:二氧化錫玻璃(CeO2/FTO Glass)之感測結構，並結合金屬－氧化物－半導體場效電晶體以形成二氧化鈰延伸式閘極場效電晶體pH感測器。在不同pH溶液中，本發明元件顯示優越之感測特性，對pH之靈敏度為 70.72 mV/pH，線性度可達0.999，檢測範圍寬廣，可測pH範圍在1~13間，響應快且穩定性高。此外，本元件具有低成本、製程簡易、具可拋性等優點。 In this invention, the cerium dioxide (CeO2)-based pH extended-gate field-effect transistors (EGFETs) were fabricated and demonstrated. The CeO2 thin film was first deposited on fluorine-doped tin oxide (FTO) glass substrates by a RF magnetron sputtering system to form the CeO2/FTO electrode. Then, it was linked to the metal-oxide- semiconductor field-effect transistors (MOSFETs) for serving as a EGFET based pH sensor. The pH sensing characteristics of the invented device was measured at buffer solutions ranging from pH2 to pH12. The result showed that the invented device exhibited high sensitivity toward pH, i.e., 70.72 mV/pH, with a good linearity of 0.999. Besides, it demonstrated a very fast response and good stability over a wide sensing region. In addition, the device fabrication of this invention has inherent merits of low cost, simple process, providing disposable sensing element, etc.

備註

本部(收文號1100027013)同意該校110年5月12日成大產創字第1101101269號號函申請終止維護專利(成大)

連絡單位 (專責單位/部門名稱)

企業關係與技轉中心

連絡電話

06-2360524

網址