全電控自旋場效電晶體ALL-ELECTRIC SPIN FIELD EFFECT TRANSISTOR

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

14/738,557

專利證號

US 9,373,709 B2

專利獲證名稱

全電控自旋場效電晶體ALL-ELECTRIC SPIN FIELD EFFECT TRANSISTOR

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2016/06/21

技術說明

自旋，一種特殊的量子性質，原本在量子力學裡用來解釋量子的第四維度性質，直到近來相關的研究與應用越趨熱門。相較於傳統電性原件，自旋相關原件在理論上具有更高速的運算以及更低耗能，這也是廣泛被研究的原因。若以實際應用以上概念為終極目標，則需整合自旋電流的產生、操控和偵測等方法，並且以全電性的控制減少或取代磁性物質、磁場的應用以達最高效率。如今，我們以Rashba 自旋軌道偶合效應為基底，應用於低維度通道的自旋傳輸，即在異質結構物上以閘極偏壓形成一維量子線通道，並且進一步的利用閘極偏壓極化以及操控電子自旋。此類自旋場效電晶體並不侷限於任何材料，指需自旋軌道耦合效應高的材料即可。 As the end of Moore’s law seems to be foreseeable, there is considerable interest in being able to control the spin dynamics and develop spin transistors that are in principle much faster and use less energy than their electronic counterparts. The spin field effect transistor (spin FET), due to its great compatibility with CMOS technology and integrated circuit applications, has been the driving force of spintronic research since theoretically proposed in 1990 by Datta and Das. Here, we propose and demonstrate an all-electric and all-semiconductor spin FET. Spin-orbit (SO) coupling are utilized to achieve complete manipulation of electron spins without any ferromagnetic materials, external magnetic fields, or optical elements for the operation of the device. Such an all-electric spin FET has great potential for high-frequency operation and promises a smooth transition from current CMOS technologies to future spintronic computing.

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