SENSING CIRCUIT WITH ADAPTIVE LOCAL REFERENCE GENERATION OF RESISTIVE MEMORY AND SENSING METHOD THEREOF

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

16/504,351

專利證號

US 10,748,612 B1

專利獲證名稱

SENSING CIRCUIT WITH ADAPTIVE LOCAL REFERENCE GENERATION OF RESISTIVE MEMORY AND SENSING METHOD THEREOF

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2020/08/18

技術說明

A sensing circuit with adaptive local reference generation of a resistive memory is configured to adaptively sense a first bit line current of a first bit line and a second bit line current of a second bit line via one sense amplifier. The sense amplifier has a first output node and a second output node. The adaptive local reference generator is electrically connected to the sense amplifier and generating a reference current equal to a sum of the second bit line current and a local reference current. A first bit line current flows through the first output node during a first bit line time interval. A second bit line current flows through the first output node during a second bit line time interval. The first bit line time interval is different from the second bit line time interval

備註

連絡單位 (專責單位/部門名稱)

智財技轉組

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