發明
中華民國
098145717
I 374050
電漿處理系統及其方法
國立雲林科技大學
2012/10/11
本專利係以微波電漿反應器探討對於半導體場中全氟化物分解去除效率 (Decomposition and Removal Efficiency, DRE)的影響,利用添加氧氣、氫氣及空氣,探討它們對分解去除效率、能量效益、以及產物分析的影響。一般半導體排放氣體特性以低濃度、高流量為主,因此必須加入大量稀釋氣體,本專利以氮氣和空氣作為稀釋氣體之代表氣體,並以四氟化碳(CF4)作為全氟化物之代表氣體。本專利所揭露之方法可分解並消除積體電路製程中殘餘之全氟化物、揮發性有機物、其他危害性化學物質,進而讓積體電路製程尾氣排放符合環保標準。 In order to understand the influence of microwave plasma on the decomposition and removal efficiency (DRE) of perfluorinated compounds (PFCs) that emitted from a semiconductor plant, this patent employed added oxygen, hydrogen, and air to explore their impact on DRE, energy efficiency, as well as product distribution. Usualy the semiconductor emission gas has the characteristics of low concentration and high flow rate, therefore it is necessary to add a large amount of dilution gas. This petent employed nitrogen and air as the representative gas for the dilution gas while carbon tetrafluoride (CF4) was chosen as the representative gas for the perfluorinated compound. The method disclose in this patent can decompose and eliminate the residue PFCs, VOCs, and other hazardous chemcials, thereby allowing emissions from the integrated circuit manufacturing process comply with environmental standards.
本部(發文號1100044008)同意貴校110年3月24日雲科大研字第1100500660號函申請終止維護專利。(雲科大)
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