理想二極體

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

109107419

專利證號

I 733358

專利獲證名稱

理想二極體

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2021/07/11

技術說明

【中文】 提供一種理想二極體，其包含功率電晶體、功率二極體、比較器以及電源供應器；功率二極體陽極及陰極分別連接功率電晶體源極及汲極；比較器差動正訊號端及輸出端分別連接功率電晶體源極及閘極；電源供應器正電源輸入及負電源輸入分別連接功率電晶體汲極及源極，供應器正電源輸出及負電源輸出分別連接比較器正電源輸入及負電源輸入；其中，理想二極體之陽極及陰極分別連接功率二極體之陽極及陰極，且理想二極體之控制極連接比較器之差動負訊號端。 【英文】 An ideal diode is provided. The ideal diode includes a power transistor, a power diode, a comparator, and a power supply. Comparing the voltage difference between the anode and the control terminal of the ideal diode via the comparator, the comparator outputs a control signal to the gate terminal of the power transistor according to the voltage difference. The control signal controls the power transistor to be turned on or to be turned off. Once the power transistor is turned on, the voltage drop of the anode and the cathode of the ideal diode is much smaller than the voltage drop of the anode and the cathode of the power diode, which causes the power diode to turn off.

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