三族氮化物量子井結構、其製造方法及具有三族氮化物量子井結構的發光體III-NITRIDE QUANTUM WELL STRUCTURE, A METHOD FOR PRODUCING THE SAME, AND A LIGHT-EMITTING UNIT USING THE SAME

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

14/057,856

專利證號

US 8,916,458 B2

專利獲證名稱

三族氮化物量子井結構、其製造方法及具有三族氮化物量子井結構的發光體III-NITRIDE QUANTUM WELL STRUCTURE, A METHOD FOR PRODUCING THE SAME, AND A LIGHT-EMITTING UNIT USING THE SAME

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2014/12/23

技術說明

本發明揭示一種三族氮化物量子井結構，係包含：一氮化鎵基體，具有一氮化鎵緩衝層、一氮化鎵角柱及一氮化鎵角錐，該氮化鎵角柱係由該氮化鎵緩衝層沿一軸向延伸，該氮化鎵角錐係由該氮化鎵角柱沿該軸向漸擴形成一設置面；一氮化銦鎵層，其二相對表面形成一第一結合面及一第二結合面，該第一結合面結合該氮化鎵基體之設置面；及一氮化鎵覆蓋層，其二相對表面形成一第一接合面及一第二接合面，該第一接合面接合該氮化銦鎵層之第二結合面。本發明另揭示該三族氮化物量子井結構的製造方法及具有該三族氮化物量子井結構的發光體。 This invention discloses an III-nitride quantum well structure, a fabrication method thereof and a light emitter with the III-nitride quantum well structure. The III-nitride quantum well structure comprises a GaN substrate, an InGaN layer and a GaN cover. The GaN substrate has a GaN buffering layer, a GaN pole and a GaN taper. The GaN pole extends alongan an axis direction on the GaN buffering layer. The GaN taper extends in the axis direction with an increased diameter from the GaN pole to form a mounting face. The InGaN layer has a first engaging face coupled to the mounting face of the GaN substrate, as well as a second engaging face opposite to the first engaging face. The GaN cover has a first conjunction face connected to the second engaging face of the InGaN layer, as well as a second conjunction face opposite to the first conjunction face.

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