Control circuit configured to terminate a set operation and a reset operation of a resistive memory cell of memory array based on the voltage variation on the data line of the resistive memory cell

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

15/591,085

專利證號

US 10,204,681 B2

專利獲證名稱

Control circuit configured to terminate a set operation and a reset operation of a resistive memory cell of memory array based on the voltage variation on the data line of the resistive memory cell

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2019/02/12

技術說明

循址記憶體(CAM)可以接收搜尋訊號並且將它與記憶體內儲存的訊號做比對。如圖一以及圖二，本發明大致上類似三元循址記憶體，但是比傳統的三元循址記憶體使用更少的電路單元(電晶體)。本發明的電路架構包含了兩個記憶單元以及一個比較電路，兩個記憶單元會接收外部的搜尋訊號並決定是否要將儲存的訊號傳至common end(CE)點上。比較電路上則是接到CE點，接地以及接到比較線(Match Line , ML)。 比較電路會根據CE點上以及SLX點上的訊號調整比較線與地之間的電阻值。升壓電路會將比較線上的電壓抬升在搜尋1，搜尋0以及不搜尋之前。如果搜尋不到，比較電路會將比較線的電壓往下拉；如果搜尋到的話，電壓將會維持在某一較高電壓。 The content addressable memory (CAM) can receive search signal, and compares the search signals with stored data of selected memory cell. As shown in FIG.1 and FIG. 2A, the present invention generally relates to a ternary content addressable memory (TCAM), and more particularly to a TCAM with fewer circuit components. The present disclosure provides the TCAM including two memory cells and a switch set, the two cells receive search signals, determines whether to send stored data to a common end (CE) or not. The switch set is coupled to the common end, a reference ground, and a match line (ML). The switch set adjusts a resistance of a path between the match line and the reference ground according to a voltage on the common end and a third search signal.

備註

連絡單位 (專責單位/部門名稱)

智財技轉組

連絡電話

03-5715131-62219

網址