微波活化退火製程Microwave Activation Annealing Process

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

097143763

專利證號

I 384556

專利獲證名稱

微波活化退火製程Microwave Activation Annealing Process

專利所屬機關 (申請機關)

財團法人國家實驗研究院

獲證日期

2013/02/01

技術說明

本發明是一種微波退火製程，其包含:提供一半導體製程，在一基板上形成一半導體元件；活化，利用一微波裝置將該半導體元件進行微波活化，其頻率系介於2.45GHz與24.15GHz之間，其溫度係介於100C與600C之間;退火，利用該微波裝置將該半導體元件進行微波退火，其頻率系介於2.45GHz與24.15GHz之間，其溫度係介於100C與600C之間;藉此，本發明能夠在不破壞材料特性與結構介面並可縮短製程時間及提升加熱均勻性的前提下，達到活化退火的目的，故可解決習用高溫活化退火之熱處理技術所造成的缺點。 Microwave annealing process were able for the applications of dopant activation and annealing of the nano-scaled transistors. Activation : semiconductor transistors was used on activation process by microwave tool, the frequency is between 2.45GHz and 24.15GHz of microwave tool, then the activation temperature is within the range of 100C -600C. Annealing semiconductor transistors was used at annealing by microwave tool, the microwave frequency were between 2.45GHz and 24.15GHz of microwave, then the activation temperature is within the range of 100C -600C. By using a microwave tool, one could suppress the processing time and improve the uniformity at heating . This would not induce any dislocations or defects at the interface of the heterogeneous substrate.

備註

連絡單位 (專責單位/部門名稱)

國研院技術移轉中心

連絡電話

02-66300686

網址