電晶體元件之製造方法與其結構Method for Manufacturing Polycrystalline Semiconductor Thin Film and Transistor Device Structure Using the Same

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

102144258

專利證號

I 552344

專利獲證名稱

電晶體元件之製造方法與其結構Method for Manufacturing Polycrystalline Semiconductor Thin Film and Transistor Device Structure Using the Same

專利所屬機關 (申請機關)

財團法人國家實驗研究院

獲證日期

2016/10/01

技術說明

本發明提供一種多晶半導體薄膜與具有多晶半導體薄膜作為通道層之電晶體之製造方法與其結構。上述多晶半導體薄膜的製造方法包括：提供基底；於基底上方形成第一非晶半導體薄膜；對第一非晶半導體薄膜進行結晶化製程，而將第一非晶半導體薄膜轉換成第一多晶半導體薄膜，第一多晶半導體薄膜的晶粒直徑大於1微米；以及對第一多晶半導體薄膜進行厚度縮減製程與界面改質製程，而將第一多晶半導體薄膜縮減成具有特定厚度之第一多晶半導體薄膜，其中特定厚度小於第一非晶半導體薄膜之厚度的十分之三。 A transistor device structure includes a substrate, a first polycrystalline semiconductor thin film and a first transistor unit. The first polycrystalline semiconductor thin film is disposed on the substrate. A grain diameter of the first polycrystalline semiconductor thin film is greater than 1 micrometer and a thickness of the first polycrystalline semiconductor thin film is less than three hundredths of the grain diameter. The first transistor unit is disposed on the first polycrystalline semiconductor thin film and includes a first gate dielectric layer and a first gate structure. The first gate dielectric layer is disposed on a surface of the first polycrystalline thin film semiconductor. The first gate structure is disposed on a surface of the first gate dielectric layer.

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