降低電磁輻射的結構與方法，以及電性物件與其製造方法STRUCTURE AND METHOD FOR REDUCING EM RADIATION, AND ELECTRIC OBJECT AND MANUFACTURING METHOD THEREOF

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/070,271

專利證號

US 8,542,075 B2

專利獲證名稱

降低電磁輻射的結構與方法，以及電性物件與其製造方法STRUCTURE AND METHOD FOR REDUCING EM RADIATION, AND ELECTRIC OBJECT AND MANUFACTURING METHOD THEREOF

專利所屬機關 (申請機關)

國立臺灣大學

獲證日期

2013/09/24

技術說明

此發明為一種降低電磁輻射的方法，包括在多個電性表面其中之一上至少配置第一共振導線，其位於電性表面其中之一的傳輸線結構的一側，並且皆跨越位於另一電性平面的溝槽。其中，溝槽橫跨對應的電性平面。另外，傳輸線結構也會跨越位於另一電性表面的溝槽。接著，將第一共振導線將具有溝槽的電性平面電性連接至另一電性平面，並且調整第一共振導線的長度、寬度或形狀，使得傳輸線結構與溝槽交會點所看到的輸入阻抗幾乎等於0，進而降低能能量輻射透過溝槽輻射的路徑。 A method for reducing EM radiation is provided. First, at least a first resonance line is disposed on one of a plurality of electric surfaces and located on one side of a transmission line structure disposed on one of the electric surfaces. Wherein, the first resonance line crosses a slot on another electric surface. In addition, the slot crosses over the corresponding electric surface. Furthermore, the transmission line structure also crosses the slot on another electric surface. Furthermore, the first resonance line is electrically connected to the electric surface having the slot and another electric surface. Then, one of lengths, width and shape of the first resonance line is adjusted to make an input impedance seen at a cross point of the transmission line structure and the slot being almost 0.

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