具有穩定成形電壓的電阻式記憶體/Resistive random access memory having stable forming voltage

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

14/734,809

專利證號

US 9,711,720 B2

專利獲證名稱

具有穩定成形電壓的電阻式記憶體/Resistive random access memory having stable forming voltage

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2017/07/18

技術說明

本發明揭示一種電阻式記憶體，用於解決習知電阻式記憶體的形成電壓穩定性不佳問題，該電阻式記憶體包含：一第一電極層；一阻隔體，設於該第一電極層，並形成一通孔用以露出該第一電極層，該阻隔體含有一第一介質；一變阻層，由該通孔內露出的第一電極層延伸至該通孔外的阻隔體表面，該變阻層含有一第二介質，該第二介質的介電常數低於該第一介質的介電常數，或該第二介質的介電常數高於該第一介質的介電常數之值不大於2；及一第二電極層，設於該變阻層表面。藉此，可確實解決上述問題。 This invention discloses a resistance random access memory which is used to solve the problem of the unstable forming voltage of the conventional RRAM. The resistance random access memory comprises a first electrode layer, a separating member, a variable resistance layer and a second electrode layer. The separating member is mounted on the first electrode layer and forming a hole to expose the first electrode layer. The separating member contains a first medium. The variable resistance layer is extended from the first electrode layer exposed in the hole to the surface of the separating member out of the hole. The variable resistance layer contains a second medium. The dielectric constant of the second medium is lower then the dielectric constant of the first medium. The second electrode layer is mounted on the surface of the variable resistance layer. Thus, it can actually resolve the said problem.

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