Electric connecting structure comprising preferred oriented Cu6Sn5 grains and method for fabricating the same

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/829,256

專利證號

US 8,952,267 B2

專利獲證名稱

Electric connecting structure comprising preferred oriented Cu6Sn5 grains and method for fabricating the same

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2015/02/10

技術說明

本發明係有關於一種包含有具優選方向成長之Cu6Sn5晶粒之電性連接結構及其製備方法。本發明之電性連接結構之製備方法，包括步驟：(A) 提供一第一基板﹔(B) 於第一基板之部分表面形成一第一奈米雙晶銅層﹔(C) 使用一銲料將第一基板與一第二基板連接，第二基板具有一第二電性墊，第二電性墊包括第二奈米雙晶銅層，且銲料係配置於第一及第二奈米雙晶銅層之間﹔以及(D) 以200°C至300°C的溫度進行迴焊(reflow)使銲料部分轉換為一介金屬化合物(intermetallic compound, IMC)層，且介金屬化合物層係包括具優選方向(preferred orientation)成長之Cu6Sn5晶粒﹔其中，第一及第二奈米雙晶銅層之50%以上的體積係分別包括雙晶銅晶粒。 An electric connecting structure comprising preferred oriented Cu6Sn5 grains and a method of fabricating the same are disclosed. The method of fabricating the electric connecting structure of the present invention comprises steps: (A) providing a first substrate; (B) forming a first nano-twinned copper layer on part of a surface of the first substrate; (C) using a solder to connect the first substrate with a second substrate having a second electrical pad, in which the second electrical pad comprises a second nano-twinned copper layer, and the solder locates between the first nano-twinned copper layer and the second nano-twinned copper layer; and (D) reflowing at the temperature of 200°C to 300°C to transform at least part of the solder into an intermetallic compound (IMC) layer, in which the IMC layer comprises plural Cu6Sn5 grains with a preferred orientation; wherein at least 50% in volume of the first and second nanotwinned copper layer comprises plural grains.

備註

本部(收文號1100065219)同意該校110年10月27日陽明交大研產學字第1100036963號函申請終止維護專利(陽明交大)

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