結合材料粒子於石墨烯－半導體基材表面之光化學方法及半導體結構METHOD FOR PHOTODEPOSITING A PARTICLE ON A GRAPHENE-SEMICONDUCTOR HYBRID PANEL AND A SEMICONDUCTOR STRUCTURE

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

14/666,948

專利證號

US 9,431,258 B1

專利獲證名稱

結合材料粒子於石墨烯－半導體基材表面之光化學方法及半導體結構METHOD FOR PHOTODEPOSITING A PARTICLE ON A GRAPHENE-SEMICONDUCTOR HYBRID PANEL AND A SEMICONDUCTOR STRUCTURE

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2016/08/30

技術說明

一種結合材料粒子於石墨烯－半導體基材表面之光化學方法，係包含：提供一石墨烯－半導體基材，該石墨烯－半導體基材包含一半導體基板及一石墨烯片，該石墨烯片係結合於該半導體基板之表面；將該石墨烯－半導體基材放置於一流體中，該流體包含一材料粒子前驅物；以一光源照射該石墨烯－半導體基材，直至該材料粒子前驅物還原或氧化以形成一材料粒子並結合於該石墨烯片表面，其中，該光源之波長與能量範圍符合或涵蓋該半導體基板之能隙及能階。藉此，不需預先對石墨烯進行改質，即可以直接將材料粒子結合於石墨烯表面。 A method of photochemically mounting a material particle on a surface of a graphene-semiconductor substrate is disclosed. The method includes steps of: providing the graphene-semiconductor substrate including a semiconductor sheet and a graphene sheet mounting on the semiconductor substrate; soaking the graphene-semiconductor substrate into a fluid containing a precursor of the material particle; illuminating the graphene-semiconductor substrate by a light source until the precursor of the material particle undergo reduction or oxidation to form the material particle mounting on a surface of the graphene, wherein the light source has a wavelength and a energy corresponding to or including both an band gap of the semiconductor sheet and an energy level of the semiconductor sheet. Accordingly, the material particle can mount on the surface of the graphene sheet without a process of modifying the graphene sheet.

備註

本部(收文號：第1080067117號)同意該校108年10月8日中產營字第1081401079號函通報專利終止維護案。

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