一種在三族氮化物磊晶過程中降低缺陷產生的方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099110277

專利證號

I 440074

專利獲證名稱

一種在三族氮化物磊晶過程中降低缺陷產生的方法

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2014/06/01

技術說明

本發明利用分子束磊晶技術成長低差排缺陷及表面平整的三族氮化物於異質基板上。其主要的成長步驟包括沉積第一層表面平滑的三族氮化物及表面充滿類似平臺和溝槽的第二層三族氮化物。平滑表面的第一層是用以仰制螺旋線差排（screw threading dislocation, TD）的形成。第二層是用以彎曲刃線差排 (edge TD)的成長方向。接下來是在其上面利用可增強吸附原子在表面擴散的磊晶法 (migration enhanced epitaxy, MEE) 來修復第二層的材料表面。最後再視應用把材料成長到特定之厚度。上述的所有步驟都可利用分子束磊晶機台來精凖的控制三族原子和氮基的沉積比率及順序來完成。此外，藉以分子束磊晶機台的RHEED功能，可以觀察成長過程中每一層材料表面的即時變化，此發明可有效的控制及成長高品質的三族氮化物。 A method to grow group III-nitride materials on a non-native substrate with much reduced threading dislocation (TD) density and smooth surface by using MBE is invented. This includes the growth of a 1st layer of group III-nitride with smooth surface morphology and a 2nd layer of group III-nitride has surface decorated with mesas and trenches. The 1st layer is to suppress the formation of screw TD while the 2nd layer is to bend the propagation of edge TD. After that, the migration enhanced epitaxy method is used to smoothen the 2nd layer surface before a main layer of group III-nitride is growth for required applications. All of these steps are performed in the MBE reactor by carefully control over the arrival rate and sequence of group III atoms and nitrogen radicals onto the sample substrate. By using reflective high energy electron diffraction, the change of each layer’s surface morphology can be monitored during the growth to achieve the high quality group III-nitride materials.

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