非序化合金的序化方法及由其方法所製得之磁性材料

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099106760

專利證號

I 381403

專利獲證名稱

非序化合金的序化方法及由其方法所製得之磁性材料

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2013/01/01

技術說明

本發明提供一種非序化合金的序化方法，包含： 於一基材上形成一(M2/M1M3)n之多層膜，其中，n≧1，且n為整數，該M1M3層的M1是選自下列所構成之群組的第一金屬原子：Ag及Au，且該M1M3層具有一面心立方晶體結構之介穩相；及 於步驟 之後，退火該多層膜迫使Ag第一金屬原子離開該面心立方晶體結構的晶格位置以於該面心立方晶體結構中留下空孔，並使該M2層的原子擴散進入該面心立方晶體結構的空孔，進而與留下有空孔之M1M3層的剩餘原子產生交互擴散以構成一序化的M2M3合金。本發明亦提供一種由其方法所製得之磁性材料 This invention provides a method for ordering an disordered alloy, which comprises forming a multilayer of (M2/M1M3)n that the M1 of the M1M3 layer is selected from first metal atoms of the group consisting of Ag, and Au and the M1M3 layer has a meta-stable phase of face-centered cubic (FCC) crystal structure on a substrate, wherein n is not less than≧1 and n is an integer, and after step , annealing the multilayer so as to force Agfirst metal atoms to leave lattice sites of the FCC crystal structure for remaining vacancies at the lattice sites in the FCC crystal structure and so as to permit atoms of the M2 layer to diffuse into the vacancies of the FCC crystal structure for causing interdiffusion of atoms of the M2 layer and remained atoms of the M1M3 layer that is left vacancies therein, which results in forming of an ordered M2M3 alloy. This invention also provides a magnetic material made from the method stated above.

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