高取光率之發光二極體

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

102133903

專利證號

I 515921

專利獲證名稱

高取光率之發光二極體

專利所屬機關 (申請機關)

國立中興大學

獲證日期

2016/01/01

技術說明

本發明高取光率之發光二極體包含一基板、一覆蓋於基板的發光膜層、一視窗層、一增亮單元及一與該發光膜層形成電連接的電極單元。發光膜層具一遠離導電基板的出光面且能提供最高放射率之光源。視窗層形成於發光膜層的出光面並具一遠離發光膜層的粗糙表面。增亮單元是由一透光性氧化物所構成並具有一晶種層及多數奈米柱。晶種層是形成於視窗層的粗糙表面上，且奈米柱是自晶種層朝遠離視窗層的方向凸伸。藉由透光性氧化物之折射率及奈米柱的相互配合而增加並從而提升光源的取光率。 The present invention takes the high rate of light-emitting diodes to include a substrate, a light-emitting layer covering the substrate, and a window layer, a brightening unit and the electrode unit is formed with a light-emitting layer electrically connected. Away from the light-emitting layer having a conductive substrate of a surface light source capable of providing the highest rate of radiation. Window layer formed on the light emitting layer of the surface and having a rough surface away from the light-emitting film. Brightening unit is composed of a light-transmitting oxide and having a seed layer and a majority of nanorods. The seed layer is formed on the roughened surface of the window layer and nanorods is from the seed layer towards a direction away from the window layer protruding. By cooperating and the refractive index of the transparent oxide nanorods increases and thereby it enhances the light extraction efficiency of the light source.

備註

本部(收文號1090023163)同意該校109年4月20日興產字第1094300209號函申請終止維護專利(中興)

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