反熔絲非揮發性記憶體之寫入與讀取電路WRITE AND READ CIRCUIT FOR ANTI-FUSE NON-VOLATILE MEMORY

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

14/616,703

專利證號

US 9,177,665 B1

專利獲證名稱

反熔絲非揮發性記憶體之寫入與讀取電路WRITE AND READ CIRCUIT FOR ANTI-FUSE NON-VOLATILE MEMORY

專利所屬機關 (申請機關)

中原大學

獲證日期

2015/11/03

技術說明

本發明係關於一種反熔絲非揮發性記憶體之寫入與讀取電路，該寫入與讀取電路係特別針對以NOI 元件結構為主的一次寫入型非揮發性記憶體元件所設計， 係能夠用以對一NOI 反熔絲非揮發性記憶體進行位元寫入與位元讀取之動作。並且， 若使用者欲透過反熔絲( anti fuse )的方式將一記憶位元寫入NOI 金氧半場效電晶體之內， 則可藉由本發明電路中的寫入單元將一高電壓寫入NOI 金氧半場效電晶體之汲極端， 進而於NOI 元件的汲極端與源極端之間造成擊穿崩潰效應(Punch Through Breakdown)， 完成該記憶位元之寫入。並且， 透過本發明之讀取電路， 使用者自該NOI 金氧半場效電晶體之中將該寫入位元讀出。 The present invention relates to a write and read circuit for anti-fuse non-volatile memory, and especially for an OTP (one-time-program) NOI (Non-overlapped implementation) MOSFET memory device. The NOI MOSFET memory device can be written with a programming bit by using anti-fuse technology through a write circuit of the present invention, wherein the write circuit would apply a high voltage to the drain terminal of the NOI MOSFET memory device for carrying out a punch through breakdown between the drain terminal and the source terminal of the NOI MOSFET memory device, so as to write the programming bit into the NOI MOSFET memory device. Moreover, the programming bit stored in the NOI MOSFET memory device can also be read out by using a read circuit of the present invention.

備註

本部(收文號1070074248)同意該校107年10月22日原產字第1070004732號函申請終止維護專利。

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