具有微電感結構之感測晶片

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

102117811

專利證號

I 513960

專利獲證名稱

具有微電感結構之感測晶片

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2015/12/21

技術說明

本發明提出了一種可應用於微感測器上的磁致伸縮感測結構。傳統的扭力感測器或是力量感測裝置須將磁致伸縮材料貼附在機件軸承上，再加上兩組外部讀取線圈來讀取感值變化，進而得知軸承機件上的扭力或力量。而本案則提出一磁致伸縮感測結構，除了可應用於各式微型感測器上之外(例如: 加速度計, 陀螺儀, 壓力計, 麥克風, 磁力計, 流量計等)，更兼具了積體化整合的優點，大幅縮小了感測器的體積，特別適用於手持裝置輕量化的需求。 The present invention relates to a sensor chip having a micro inductor structure. The chip includes a supporting structure layer and a micro inductor layer. The micro inductor layer forms on the supporting structure layer and has an inductance. The micro inductor layer includes an insulation layer, at least one magnetic layer, and a micro winding layer. When an external physical quantity is applied to the sensor chip, the micro inductor layer can deform correspondingly and cause the inductance changing. The change of the inductance can be measured by an inductance measurement circuit. The circuit could be an external circuit or be integrated into the sensor chip. The present invention has benefits of simple structure, low cost, easy to manufacture, high sensitivity and temperature stability.

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