PbTaO3/SiO2閘極ISFET裝置及其製法、及形成感測膜之方法

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

11/255,656

專利證號

US 7,387,923 B2

專利獲證名稱

PbTaO3/SiO2閘極ISFET裝置及其製法、及形成感測膜之方法

專利所屬機關 (申請機關)

國立雲林科技大學

獲證日期

2008/06/17

技術說明

本發明揭露了一種測量以PbTaO3/SiO2閘極ISFET裝置，其利用電流/電壓量測裝置量 測出非晶形矽氫離子感測場效電晶體之源/汲極電流對閘 極電壓之曲線，再由曲線中進一步估算出元件之感測度 與溫度之關係以及溫度係數與pH值之關係，藉以反推出 未知濃度溶液中之離子濃度或pH值。 A PbTiO3/SiO2-gated ISFET device comprising a PbTiO3 thin film as H+-sensing film, and a method of forming the same. The PbTiO3 thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO3/SiO2 gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.

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