以碳為主的複合材料之製作方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

104140579

專利證號

I 596660

專利獲證名稱

以碳為主的複合材料之製作方法

專利所屬機關 (申請機關)

淡江大學學校財團法人淡江大學

獲證日期

2017/06/16

技術說明

一種以碳為主的複合材料之製作方法，包含:令含有非晶碳基質及多數分散於其中的等軸超奈米晶鑽石晶粒之以碳為主的複合材料層承載於載座上並處於含有C2 與CN 物種的電漿環境中施于電漿處理。等軸超奈米晶鑽石品粒的粒徑≦5 nm 且相鄰等軸超奈米晶鑽石晶粒的問距≧0.05 nm 。載座提供有負偏壓且由電漿物種轟擊而升溫到一低於500 ℃ 的工作溫度；C2 與CN 物種是受負偏壓吸引至以碳為主的複合材料層令其產生相變化，以使各相鄰等軸超奈米品鑽石晶粒成長成一由奈米石墨相所包覆的奈米針狀鑽石品;電漿處理所施予之預定時間或負偏壓是足以使電漿處理後之複合材料層之起始電場低於5. 9 V /μ m。 A method for synthesizing a carbon based composite materials. The said method include put a equi-axed nano-grains diamond films on a substrate, subjecting a post-treatment process in a plasma, which contain C2 and CN species. The nano-grains diamond films contains grain size ≦5 n m With grain boundaries ≧0.05 nm. The substrate was not external heated and was biased such that the substrate temperature was heated to a temperature lower than 500 ℃ due to ion bombardment. The C2 and CN species were att1'acted to the nano-grains diamond films, inducing the transfo1'mation of diamond grains into needle-like geometry, which are encased in nano-graphite layers. The plasma post-treatment process fo large enough bias vo1tage and with sufficient length of time will render the nano-grains diamond films into superior electron field emission properties, i.e,. with turn-on field smaller than 5.9 V/μm.

備註

本部(發文號1100066368)同意貴校110年8月11日校研字第1100006615號函申請終止維護專利。(淡江)

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