MANUFACTURING, UTILIZATION, AND ANTIFOULING COATING OF HYDROXYL-COVERED SILICON QUANTUM DOT NANOPARTICLE

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

15/440,596

專利證號

US 10,508,234 B2

專利獲證名稱

MANUFACTURING, UTILIZATION, AND ANTIFOULING COATING OF HYDROXYL-COVERED SILICON QUANTUM DOT NANOPARTICLE

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2019/12/17

技術說明

本發明揭露一種羥基包覆矽量子點奈米粒子，其具有矽核、複數個矽量子點與複數個烴鍵。矽核的表面的第一部分被複數個矽羥基(Si-OH)鈍化。複數個矽量子點依附於矽核的表面的第二部分。複數個烴鍵透過複數個碳化矽鍵(Si-C)鍵合到複數個矽量子點的每一者，其中複數個烴鍵的每一末端具有碳羥基(C-OH)，使得羥基包覆矽量子點奈米粒子被複數個碳羥基與複數個矽羥基完全包覆。本發明所揭露的矽量子點奈米粒子具有非常長的螢光衰減週期，因此適合time-gated免疫螢光顯影，以達到移除自體螢光的目的。 A hydroxyl-covered silicon quantum dot nanoparticle having a silicon core, a plurality of silicon quantum dots, and a plurality of hydrocarbon chains is illustrated. A first portion of a surface associated with the silicon core is passivated by a plurality of silicon hydroxyl groups (Si-OH). The silicon quantum dots are attached to a second portion of the surface associated with the silicon core. The hydrocarbon chains are bonded to each of the silicon quantum dots through a plurality of silicon carbide bonds (Si-C), wherein each termination of the hydrocarbon chains has a carbon hydroxyl group (C-OH), such that the hydroxyl-covered silicon quantum dot nanoparticle is thoroughly covered by the carbon hydroxyl groups (C-OH) and the silicon hydroxyl groups (Si-OH). The silicon quantum dot nanopartiles disclosed here have very long photoluminescence lifetime, therefore suitable for time-gated autofluorescence-free immunofluorescence imaging.

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