具有漸變含量之電洞穿隧層之發光元件 Light emitting device with graded composition hole tunneling layer

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/551,068

專利證號

US 8,829,652 B2

專利獲證名稱

具有漸變含量之電洞穿隧層之發光元件 Light emitting device with graded composition hole tunneling layer

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2014/09/09

技術說明

一種具有漸變含量之電洞穿隧層之發光元件，包含:基板；n-型半導體層，設置在基板上，n-型半導體層具有第一部份及第二部份；具有漸變含量之電洞穿隧層，設置在n-型半導體層之第一部份上；電子阻擋層，設置在具有漸變含量之電洞穿隧層上；p-型半導體層，設置在電子阻擋層上；第一電極，設置在p-型半導體層上；以及第二電極，設置在n-型半導體層之第二部份上且與n-型導體層之第一部份上之結構電性分離，且第二電極與第一電極之電性相反，藉由具有漸變含量之電洞穿隧層做為多重量子井層，在寬能隙發光元件中，提高電洞傳遞效率，進一步的提高發光效率。 A light emitting device with graded composition hole tunneling layer is provided. The device includes a substrate and an n-type semiconductor layer is disposed on the substrate, in which the n-type semiconductor layer includes a first portion and a second portion. A graded composition hole tunneling layer is disposed on the first portion of the n-type semiconductor layer. An electron blocking layer is disposed on the graded composition hole tunneling layer. A p-type semiconductor layer is disposed on the electron blocking layer. A first electrode is disposed on the p-type semiconductor layer, and a second electrode is disposed on the second portion of the n-type semiconductor layer and is electrical insulated from the first portion of the n-type semiconductor. The graded composition hole tunneling layer is used as the quantum-well to improve the transmission efficiency of the holes to increase the light emitting efficiency of the light emitting device.

備註

本部(收文號1100065219)同意該校110年10月27日陽明交大研產學字第1100036963號函申請終止維護專利(陽明交大)

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