ELECTRON-BEAM LITHOGRAPHY METHOD AND SYSTEM

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

15/610,644

專利證號

US 10,115,563 B2

專利獲證名稱

ELECTRON-BEAM LITHOGRAPHY METHOD AND SYSTEM

專利所屬機關 (申請機關)

國立臺灣大學

獲證日期

2018/10/30

技術說明

一種電子束微影方法，包含以下步驟。經由圖案尺寸模擬系統運算且輸出正型電子敏感層之顯影持續時間與電子束裝置之條件參數。低溫處理顯影液以冷卻顯影液。依據圖案尺寸模擬系統所輸出之條件參數，使用電子束以照射正型電子敏感層之曝光區。依據圖案尺寸模擬系統所輸出之顯影持續時間，使用已冷卻之顯影液顯影正型電子敏感層之顯影區，顯影區係位於曝光區內，且顯影區的面積係小於曝光區的面積。如此一來，上述電子束微影方法可較精確地控制正型電子敏感層之顯影圖案尺寸，亦可有效地縮小正型電子敏感層之顯影圖案的最小尺寸。 An electron-beam lithography method includes following steps. Calculate and output a development time of a positive-tone electron-sensitive layer and a parameter of a electron beam device by a pattern dimension simulation system. Perform a low-temperature treatment to chill a developer. Use an electron-beam to expose a exposure region of the positive-tone electron-sensitive layer depending on the parameter outputted by the pattern dimension simulation system. Use the chill developer to develop a development region of the positive-tone electron-sensitive layer depending on the development time, the development region is located in the exposure region, and an area of the exposure region is smaller than an area of the first portion. As a result, the electron-beam lithography method may controll a dimension of development pattern of the positive-tone electron-sensitive layer more accurately, and may also decrese a minimum dimension of development pattern of the positive-tone electron-sensitive layer.

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