SUBSTRATE-INTEGRATED-WAVEGUIDE-FED CAVITY-BACKED DUAL-POLARIZED PATCH ANTENNA

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

17/036,107

專利證號

US 11,145,983 B1

專利獲證名稱

SUBSTRATE-INTEGRATED-WAVEGUIDE-FED CAVITY-BACKED DUAL-POLARIZED PATCH ANTENNA

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2021/10/12

技術說明

相比傳統基板合成波導管饋入之雙極化天線，本技術僅應用雙層基板，實現雙極化天線所需之雙端饋入網路，同時採用高階模態之共振腔與2 × 2貼片天線結構，達到天線結構薄型化及微小化的效果，成功開發微小基板合成波導管饋入之 28 GHz 雙極化背腔貼片天線，整體大小僅0.74 × 0.74 × 0.047 λ3，天線操作頻段為27.4 – 28.35 GHz，在頻帶內的輻射增益高於6 dBi，且雙饋入端的隔離度高於20 dB，具有良好的雙極化輻射特性。 Compared to conventional dual-polarized antenna with substrate-integrated-waveguide (SIW), the proposed technique utilizes two-layer substrates to realize a feeding network with two ports for dual-polarized antenna. Meanwhile, a higher order mode resonant cavity and 2 x 2 patch antenna configurations are adopted to compact the size of antenna. Based on the proposed technique, a 28 GHz dual-polarized cavity-backed patch antenna with compact SIW feeding network was developed and implemented. Within the dimensions of only 0.74 × 0.74 × 0.047 λ3, the proposed antenna has good performance and operates in bands of 27.4 – 28.35 GHz. The radiation gain is higher than 6 dBi and the isolation between two ports is higher than 20 dB.

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